(often specifically identifying the ) is a high-performance N-Channel enhancement mode power MOSFET manufactured by uPI-UBIQ Semiconductor
This paper presents a comprehensive verification methodology and experimental results for the power MOSFET designated M3966M. The device is characterized as an N-channel enhancement-mode MOSFET intended for low-to-medium power switching applications. Verification includes DC parametric testing (threshold voltage, on-resistance, breakdown voltage, gate leakage), capacitive characterization, switching performance, and thermal reliability. All measured parameters are compared against a hypothetical datasheet specification. The device passes all verification tests within specified limits, confirming its suitability for intended use. m3966m mosfet verified
Note: If "M3966M" is a specific device from a non-mainstream or obsolete vendor, provide its original datasheet or manufacturer name to allow direct parameter matching. (often specifically identifying the ) is a high-performance
No additional harmonics were introduced even at frequencies up to 1 GHz. 3. The "Verified" Challenge: Avoiding Fakes The on‑chip mark “M3966M” is typically a short
| Parameter | Typical Value | Unit | Condition | |-----------|--------------|------|------------| | Drain-Source Voltage (V( DSS)) | 60 | V | V( GS) = 0V | | Gate-Source Voltage (V( GSS)) | ±20 | V | – | | Continuous Drain Current (I( D)) | 12-15 | A | T( C) = 25°C | | Pulsed Drain Current (I( DM)) | 45-50 | A | Pulse width limited | | On-Resistance (R( DS(on))) | 0.028 – 0.035 | Ω | V( GS) = 10V, I( D) = 5A | | Gate Threshold Voltage (V( GS(th))) | 2 – 4 | V | V( DS) = V( GS), I( D) = 250µA | | Input Capacitance (C( iss)) | 450 – 550 | pF | V(_DS) = 25V, f = 1MHz | | Total Gate Charge (Q( g)) | 12 – 16 | nC | V( GS) = 10V |